PART |
Description |
Maker |
E0C63P366 |
CMOS 4-Bit Low Voltage Singl Single Chip Microcomputer Composed of 4-Bit E0C63000 Core CPU,RAM,Rewritable ROM,Segment LCD Driver,On-Board Writing
|
爱普生(中国)有限公
|
E0C63B07 |
CMOS 4-Bit Low Voltage Singl Single Chip Microcomputer Composed of 4-Bit E0C63000 Core CPU,RAM,ROM7 Segment Type LCD Driver0000 Gates of Gate Array(4位CMOS、低电压、单片微型计算机(含4位E0C63000中央处理器核RAM,ROM7段LCD驱动器,10000门阵列))
|
爱普生(中国)有限公
|
KM23C64000T |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
W25X16VSSIG W25X32VSSIG W25X64VSSIG W25X16VSFI W25 |
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
|
W25X32VDAI W25X32VDAIZ W25X32VZPI W25X32VZPIZ W25X |
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond http://
|
TC58NS512DC |
512-MBIT (64M x 8 BITS) CMOS NAND E 2 PROM (64M BYTE SmartMedia TM)
|
TOSHIBA
|
IBM13M64734CCA |
64M x 72 2-Bank Registered/Buffered SDRAM Module(64M x 72 2组寄缓冲同步动态RAM模块) 64米72 2,银行注缓冲内存模组4米72 2组寄缓冲同步动态内存模块)
|
International Business Machines, Corp.
|
K9F1216U0A |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
|
Samsung Electronic
|
M390S6450AT1 |
64M x 72 SDRAM DIMM with PLL & Register based on 64M x 4, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
Samsung Electronic
|
K847PH K827P8 K827PH K817P K817P1 K817P2 K817P3 K8 |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory From old datasheet system Optocoupler with Phototransistor Output XTAL MTL T/H HC49/U
|
Samsung Electronic TFUNK Vishay Telefunken Vishay Intertechnology,Inc.
|
MBM29LV650UE-90 MBM29LV651UE90TR 29LV650 MBM29LV65 |
64M (4M x 16) BIT
|
FUJITSU[Fujitsu Media Devices Limited]
|